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IPD30N03S2L20ATMA1

IPD30N03S2L20ATMA1

IPD30N03S2L20ATMA1

MOSFET N-CH 30V 30A TO252-31

compliant

IPD30N03S2L20ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.35441 -
5,000 $0.32997 -
12,500 $0.31775 -
25,000 $0.31108 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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