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ZXMN10A11KTC

ZXMN10A11KTC

ZXMN10A11KTC

Diodes Incorporated

MOSFET N-CH 100V 2.4A TO252-2

non-compliant

ZXMN10A11KTC Pricing & Ordering

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2,500 $0.33656 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 274 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.11W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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