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IPD25CN10NGATMA1

IPD25CN10NGATMA1

IPD25CN10NGATMA1

MOSFET N-CH 100V 35A TO252-3

compliant

IPD25CN10NGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.51975 -
5,000 $0.49376 -
12,500 $0.47520 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 50 V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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