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IPD096N08N3GBTMA1

IPD096N08N3GBTMA1

IPD096N08N3GBTMA1

MOSFET N-CH 80V 73A TO252-3

compliant

IPD096N08N3GBTMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.35000 $0.35
500 $0.3465 $173.25
1000 $0.343 $343
1500 $0.3395 $509.25
2000 $0.336 $672
2500 $0.3325 $831.25
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 40 V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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