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IXTA1N170DHV

IXTA1N170DHV

IXTA1N170DHV

IXYS

MOSFET N-CH 1700V 1A TO263

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IXTA1N170DHV Pricing & Ordering

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50 $11.45160 $572.58
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16Ohm @ 500mA, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3090 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 290W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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