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IPD050N10N5ATMA1

IPD050N10N5ATMA1

IPD050N10N5ATMA1

MOSFET N-CH 100V 80A TO252-3

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IPD050N10N5ATMA1 Pricing & Ordering

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2,500 $1.09281 -
13728 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.8V @ 84µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 50 V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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