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IPD5N25S3430ATMA1

IPD5N25S3430ATMA1

IPD5N25S3430ATMA1

MOSFET N-CH 250V 5A TO252-3

compliant

IPD5N25S3430ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.34149 -
Inventory changes frequently.
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 25 V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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