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IPB80N03S4L02ATMA1

IPB80N03S4L02ATMA1

IPB80N03S4L02ATMA1

MOSFET N-CH 30V 80A TO263-3

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IPB80N03S4L02ATMA1 Pricing & Ordering

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1,000 $0.88794 -
15835 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 9750 pF @ 25 V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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