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IPB65R190C7ATMA2

IPB65R190C7ATMA2

IPB65R190C7ATMA2

MOSFET N-CH 650V 13A TO263-3

non-compliant

IPB65R190C7ATMA2 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.56884 -
2,000 $1.46065 -
5,000 $1.40655 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 400 V
FET Feature -
Power Dissipation (Max) 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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