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NTR4101PT1G

NTR4101PT1G

NTR4101PT1G

onsemi

MOSFET P-CH 20V 1.8A SOT23-3

compliant

NTR4101PT1G Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.09618 -
6,000 $0.08694 -
15,000 $0.07770 -
30,000 $0.07308 -
75,000 $0.06523 -
150,000 $0.06292 -
12000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 85mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 675 pF @ 10 V
FET Feature -
Power Dissipation (Max) 420mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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