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IPB60R250CPATMA1

IPB60R250CPATMA1

IPB60R250CPATMA1

MOSFET N-CH 650V 12A TO263-3

compliant

IPB60R250CPATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.37000 $1.37
500 $1.3563 $678.15
1000 $1.3426 $1342.6
1500 $1.3289 $1993.35
2000 $1.3152 $2630.4
2500 $1.3015 $3253.75
62000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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