Welcome to ichome.com!

logo
Home

IPB60R105CFD7ATMA1

IPB60R105CFD7ATMA1

IPB60R105CFD7ATMA1

MOSFET N-CH 650V 21A TO263-3-2

compliant

IPB60R105CFD7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.17180 $4.1718
500 $4.130082 $2065.041
1000 $4.088364 $4088.364
1500 $4.046646 $6069.969
2000 $4.004928 $8009.856
2500 $3.96321 $9908.025
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 470µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1752 pF @ 400 V
FET Feature -
Power Dissipation (Max) 106W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

STD80N4F6
STD80N4F6
$0 $/piece
RM45N60DF
RM45N60DF
$0 $/piece
SIR184LDP-T1-RE3
SCT3060ALHRC11
FQD7P20TM
FQD7P20TM
$0 $/piece
FDS3570
SISH114ADN-T1-GE3
STP52P3LLH6

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.