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IPB180P04P4L02ATMA2

IPB180P04P4L02ATMA2

IPB180P04P4L02ATMA2

MOSFET P-CH 40V 180A TO263-7

non-compliant

IPB180P04P4L02ATMA2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.95000 $4.95
500 $4.9005 $2450.25
1000 $4.851 $4851
1500 $4.8015 $7202.25
2000 $4.752 $9504
2500 $4.7025 $11756.25
0 items
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 286 nC @ 10 V
Vgs (Max) +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 18700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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