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TPN1110ENH,L1Q

TPN1110ENH,L1Q

TPN1110ENH,L1Q

MOSFET N-CH 200V 7.2A 8TSON

compliant

TPN1110ENH,L1Q Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.61880 -
4975 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 114mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 100 V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 39W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN
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