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IPB100N10S305ATMA1

IPB100N10S305ATMA1

IPB100N10S305ATMA1

MOSFET N-CH 100V 100A TO263-3

compliant

IPB100N10S305ATMA1 Pricing & Ordering

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1,000 $1.93285 -
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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 176 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11570 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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