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SUP50N03-5M1P-GE3

SUP50N03-5M1P-GE3

SUP50N03-5M1P-GE3

Vishay Siliconix

MOSFET N-CH 30V 50A TO220AB

compliant

SUP50N03-5M1P-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.7W (Ta), 59.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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