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IPB020N04NGATMA1

IPB020N04NGATMA1

IPB020N04NGATMA1

MOSFET N-CH 40V 140A TO263-7

non-compliant

IPB020N04NGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.30694 -
2,000 $1.21681 -
5,000 $1.17174 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9700 pF @ 20 V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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