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IPAN60R800CEXKSA1

IPAN60R800CEXKSA1

IPAN60R800CEXKSA1

MOSFET N-CH 600V 8.4A TO220

non-compliant

IPAN60R800CEXKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.10000 $1.1
10 $0.98200 $9.82
100 $0.78650 $78.65
500 $0.62154 $310.77
1,000 $0.50158 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V
FET Feature Super Junction
Power Dissipation (Max) 27W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
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