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DMT10H009SK3-13

DMT10H009SK3-13

DMT10H009SK3-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

compliant

DMT10H009SK3-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.53777 $0.53777
500 $0.5323923 $266.19615
1000 $0.5270146 $527.0146
1500 $0.5216369 $782.45535
2000 $0.5162592 $1032.5184
2500 $0.5108815 $1277.20375
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2028 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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