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IPAN60R650CEXKSA1

IPAN60R650CEXKSA1

IPAN60R650CEXKSA1

MOSFET N-CH 600V 9.9A TO220

non-compliant

IPAN60R650CEXKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
500 $0.69608 $348.04
691 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 20.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
FET Feature Super Junction
Power Dissipation (Max) 28W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
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