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IPD80R450P7ATMA1

IPD80R450P7ATMA1

IPD80R450P7ATMA1

MOSFET N-CH 800V 11A TO252

non-compliant

IPD80R450P7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.02946 -
5,000 $0.99565 -
2481 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 500 V
FET Feature Super Junction
Power Dissipation (Max) 73W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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