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IPA65R1K5CEXKSA1

IPA65R1K5CEXKSA1

IPA65R1K5CEXKSA1

MOSFET N-CH 650V 5.2A TO220

compliant

IPA65R1K5CEXKSA1 Pricing & Ordering

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500 $0.54654 $273.27
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 100 V
FET Feature Super Junction
Power Dissipation (Max) 30W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
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