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FDMS10C4D2N

FDMS10C4D2N

FDMS10C4D2N

onsemi

MOSFET N-CH 100V 17A 8PQFN

SOT-23

non-compliant

FDMS10C4D2N Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.61281 -
6,000 $1.55218 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 50 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
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