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IMBG120R060M1HXTMA1

IMBG120R060M1HXTMA1

IMBG120R060M1HXTMA1

SICFET N-CH 1.2KV 36A TO263

compliant

IMBG120R060M1HXTMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $17.71000 $17.71
500 $17.5329 $8766.45
1000 $17.3558 $17355.8
1500 $17.1787 $25768.05
2000 $17.0016 $34003.2
2500 $16.8245 $42061.25
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 83mOhm @ 13A, 18V
Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 18 V
Vgs (Max) +18V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1145 pF @ 800 V
FET Feature Standard
Power Dissipation (Max) 181W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-12
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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