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G30N02T

G30N02T

G30N02T

N20V,RD(MAX)<[email protected],VTH0.5V~1.

compliant

G30N02T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.62000 $0.62
500 $0.6138 $306.9
1000 $0.6076 $607.6
1500 $0.6014 $902.1
2000 $0.5952 $1190.4
2500 $0.589 $1472.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 10 V
FET Feature -
Power Dissipation (Max) 40W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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