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G30N02T

G30N02T

G30N02T

N20V,RD(MAX)<[email protected],VTH0.5V~1.

non-compliant

G30N02T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.62000 $0.62
500 $0.6138 $306.9
1000 $0.6076 $607.6
1500 $0.6014 $902.1
2000 $0.5952 $1190.4
2500 $0.589 $1472.5
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 10 V
FET Feature -
Power Dissipation (Max) 40W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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