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IPS65R950C6AKMA1

IPS65R950C6AKMA1

IPS65R950C6AKMA1

MOSFET N-CH 650V 4.5A TO251-3

non-compliant

IPS65R950C6AKMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.29000 $1.29
10 $1.14500 $11.45
100 $0.90500 $90.5
150 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 328 pF @ 100 V
FET Feature -
Power Dissipation (Max) 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak
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