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BSC123N10LSGATMA1

BSC123N10LSGATMA1

BSC123N10LSGATMA1

MOSFET N-CH 100V 10.6/71A 8TDSON

non-compliant

BSC123N10LSGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.80438 -
10,000 $0.78750 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 50 V
FET Feature -
Power Dissipation (Max) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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