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PJQ4466AP_R2_00001

PJQ4466AP_R2_00001

PJQ4466AP_R2_00001

60V N-CHANNEL ENHANCEMENT MODE M

non-compliant

PJQ4466AP_R2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.60000 $0.6
500 $0.594 $297
1000 $0.588 $588
1500 $0.582 $873
2000 $0.576 $1152
2500 $0.57 $1425
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 20 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 44.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN3333-8
Package / Case 8-PowerVDFN
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