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BSC100N10NSFGATMA1

BSC100N10NSFGATMA1

BSC100N10NSFGATMA1

MOSFET N-CH 100V 11.4/90A 8TDSON

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BSC100N10NSFGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $1.01001 -
10,000 $0.98882 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11.4A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 50 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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