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SQD19P06-60L_T4GE3

SQD19P06-60L_T4GE3

SQD19P06-60L_T4GE3

Vishay Siliconix

MOSFET P-CH 60V 20A TO252AA

compliant

SQD19P06-60L_T4GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.66528 -
5,000 $0.63202 -
12,500 $0.60826 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1490 pF @ 25 V
FET Feature -
Power Dissipation (Max) 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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