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BSC0805LSATMA1

BSC0805LSATMA1

BSC0805LSATMA1

MOSFET N-CH 100V 79A TDSON-8-6

compliant

BSC0805LSATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.73000 $2.73
500 $2.7027 $1351.35
1000 $2.6754 $2675.4
1500 $2.6481 $3972.15
2000 $2.6208 $5241.6
2500 $2.5935 $6483.75
4076 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 50 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN
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