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SIHB22N60AE-GE3

SIHB22N60AE-GE3

SIHB22N60AE-GE3

Vishay Siliconix

MOSFET N-CH 600V 20A D2PAK

compliant

SIHB22N60AE-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.42000 $4.42
10 $3.95900 $39.59
100 $3.27110 $327.11
500 $2.67522 $1337.61
1,000 $2.27796 -
3,000 $2.17101 -
5,000 $2.09461 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1451 pF @ 100 V
FET Feature -
Power Dissipation (Max) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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