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BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

MOSFET N-CH 100V 23A/100A TSON

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BSC027N10NS5ATMA1 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 146µA
Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8200 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSON-8-3
Package / Case 8-PowerTDFN
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