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IPS65R650CEAKMA1

IPS65R650CEAKMA1

IPS65R650CEAKMA1

MOSFET N-CH 700V 10.1A TO251-3

compliant

IPS65R650CEAKMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,500 $0.43719 -
36000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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