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BSC016N06NSATMA1

BSC016N06NSATMA1

BSC016N06NSATMA1

MOSFET N-CH 60V 30A/100A TDSON

compliant

BSC016N06NSATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $1.13400 -
10,000 $1.11300 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8 FL
Package / Case 8-PowerTDFN
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