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SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 3.9A SOT23-3

non-compliant

SI2312BDS-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.17653 -
6,000 $0.16577 -
15,000 $0.15501 -
30,000 $0.14748 -
30399 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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