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G2312

G2312

G2312

N20V,RD(MAX)<18M@10V,RD(MAX)<20M

G2312 Datasheet

compliant

G2312 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.47000 $0.47
500 $0.4653 $232.65
1000 $0.4606 $460.6
1500 $0.4559 $683.85
2000 $0.4512 $902.4
2500 $0.4465 $1116.25
2990 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5A
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 18mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 780 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
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