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Name | Value |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 30A |
Drive Voltage (Max Rds On, Min Rds On) | 6V |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 1.4V @ 3.5mA |
Gate Charge (Qg) (Max) @ Vgs | 8.25 nC @ 6 V |
Vgs (Max) | +7.5V, -12V |
Input Capacitance (Ciss) (Max) @ Vds | 236 pF @ 400 V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
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