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SI2342DS-T1-GE3

SI2342DS-T1-GE3

SI2342DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 6A SOT-23

compliant

SI2342DS-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.19855 -
6,000 $0.18645 -
15,000 $0.17435 -
30,000 $0.16588 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 17mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.8 nC @ 4.5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 1070 pF @ 4 V
FET Feature -
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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