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ZXMN10A08E6QTA

ZXMN10A08E6QTA

ZXMN10A08E6QTA

Diodes Incorporated

MOSFET BVDSS: 61V~100V SOT26 T&R

compliant

ZXMN10A08E6QTA Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.39173 $0.39173
500 $0.3878127 $193.90635
1000 $0.3838954 $383.8954
1500 $0.3799781 $569.96715
2000 $0.3760608 $752.1216
2500 $0.3721435 $930.35875
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-26
Package / Case SOT-23-6
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