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BUK9E4R9-60E,127

BUK9E4R9-60E,127

BUK9E4R9-60E,127

NXP USA Inc.

MOSFET N-CH 60V 100A I2PAK

compliant

BUK9E4R9-60E,127 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.72000 $0.72
500 $0.7128 $356.4
1000 $0.7056 $705.6
1500 $0.6984 $1047.6
2000 $0.6912 $1382.4
2500 $0.684 $1710
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 9710 pF @ 25 V
FET Feature -
Power Dissipation (Max) 234W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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