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DMT10H072LFDF-13

DMT10H072LFDF-13

DMT10H072LFDF-13

Diodes Incorporated

MOSFET N-CH 100V 4A 6UDFN

non-compliant

DMT10H072LFDF-13 Pricing & Ordering

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10,000 $0.28036 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 266 pF @ 50 V
FET Feature -
Power Dissipation (Max) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type F)
Package / Case 6-UDFN Exposed Pad
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