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DMT10H072LFDF-13

DMT10H072LFDF-13

DMT10H072LFDF-13

Diodes Incorporated

MOSFET N-CH 100V 4A 6UDFN

compliant

DMT10H072LFDF-13 Pricing & Ordering

Quantity Unit Price Ext. Price
10,000 $0.28036 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 266 pF @ 50 V
FET Feature -
Power Dissipation (Max) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type F)
Package / Case 6-UDFN Exposed Pad
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