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SI3430DV-T1-GE3

SI3430DV-T1-GE3

SI3430DV-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 1.8A 6TSOP

compliant

SI3430DV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.47921 -
6,000 $0.45671 -
15,000 $0.44064 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.14W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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