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DMT10H025SSS-13

DMT10H025SSS-13

DMT10H025SSS-13

Diodes Incorporated

MOSFET N-CH 100V 7.4A 8SO

non-compliant

DMT10H025SSS-13 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.27822 -
5,000 $0.26118 -
12,500 $0.25265 -
25,000 $0.24800 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1544 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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