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DMN1019USN-7

DMN1019USN-7

DMN1019USN-7

Diodes Incorporated

MOSFET N-CH 12V 9.3A SC59

compliant

DMN1019USN-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.14750 -
6,000 $0.13945 -
15,000 $0.13139 -
30,000 $0.12173 -
75,000 $0.11771 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 2.5V
Rds On (Max) @ Id, Vgs 10mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50.6 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2426 pF @ 10 V
FET Feature -
Power Dissipation (Max) 680mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-59-3
Package / Case TO-236-3, SC-59, SOT-23-3
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