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DMT10H009LFG-7

DMT10H009LFG-7

DMT10H009LFG-7

Diodes Incorporated

MOSFET N-CH 100V 13A/50A PWRDI

compliant

DMT10H009LFG-7 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.54778 $0.54778
500 $0.5423022 $271.1511
1000 $0.5368244 $536.8244
1500 $0.5313466 $797.0199
2000 $0.5258688 $1051.7376
2500 $0.520391 $1300.9775
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2361 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
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