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DMT10H032LFVW-7

DMT10H032LFVW-7

DMT10H032LFVW-7

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

compliant

DMT10H032LFVW-7 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.39948 $0.39948
500 $0.3954852 $197.7426
1000 $0.3914904 $391.4904
1500 $0.3874956 $581.2434
2000 $0.3835008 $767.0016
2500 $0.379506 $948.765
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 683 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PowerDI3333-8 (SWP) Type UX
Package / Case 8-PowerVDFN
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