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IXTU01N100

IXTU01N100

IXTU01N100

IXYS

MOSFET N-CH 1000V 100MA TO251

compliant

IXTU01N100 Pricing & Ordering

Quantity Unit Price Ext. Price
70 $1.85000 $129.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 54 pF @ 25 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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