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DMN13H750S-13

DMN13H750S-13

DMN13H750S-13

Diodes Incorporated

MOSFET N-CH 130V 1A SOT23

compliant

DMN13H750S-13 Pricing & Ordering

Quantity Unit Price Ext. Price
10,000 $0.20220 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 130 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 231 pF @ 25 V
FET Feature -
Power Dissipation (Max) 770mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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