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IPB60R070CFD7ATMA1

IPB60R070CFD7ATMA1

IPB60R070CFD7ATMA1

MOSFET N-CH 650V 31A TO263-3-2

non-compliant

IPB60R070CFD7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $7.76000 $7.76
500 $7.6824 $3841.2
1000 $7.6048 $7604.8
1500 $7.5272 $11290.8
2000 $7.4496 $14899.2
2500 $7.372 $18430
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 15.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2721 pF @ 400 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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